TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 800 V |
Current Rating | 4.00 A |
Case/Package | TO-220 |
Polarity | NPN, N-Channel |
Power Dissipation | 90.0 W |
Breakdown Voltage (Collector to Emitter) | 800V |
Continuous Collector Current | 4A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The BUL216 is a 800V High Voltage Fast Switching NPN Power Transistor manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a hollow emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● High voltage capability
● Very high switching speed
● High operating junction temperature
● High ruggedness
● Well-controlled hFE parameter for increased reliability
ST Microelectronics
6 Pages / 0.23 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
25 Pages / 0.25 MByte
ST Microelectronics
1 Pages / 0.13 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.