| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -5.80 A |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 30.0 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.60 W |
| Input Capacitance | 1.33 nF |
| Gate Charge | 23.0 nC |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | 5.80 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDC608PZ is a 2.5V specified P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery power circuits and DC-to-DC conversion applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
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FAIRCHILD SEMICONDUCTOR FDC608PZ MOSFET Transistor, P Channel, 5.8A, -20V, 0.026Ω, -4.5V, -1V
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