| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO3P |
| Drain to Source Resistance (on) (Rds) | 49.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 392 W |
| Drain to Source Voltage (Vds) | 250V |
| Breakdown Voltage (Drain to Source) | 250 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 59.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The FDA59N25 is an UniFET™ N-channel MOSFET produced using Fairchild Semiconductor"s high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
● 63nC Typical low gate charge
● 70pF Typical low Crss
● 100% Avalanche tested
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