TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | SOT-23 |
Polarity | P-Channel |
Drain to Source Voltage (Vds) | 60V |
Continuous Drain Current (Ids) | 0.17A |
Rise Time | 9.00 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
The BSS84P H6327 from Infineon is surface mount, P channel logic level enhancement mode SIPMOS small signal transistor in SOT-23 package. The device features dv/dt and Avalanche ratings.
● Automotive grade AEC-Q101 qualified
● Drain to source voltage (Vds) of -60V
● Gate to source voltage of ±20V
● Continuous drain current (Id) of -170mA
● Power dissipation (pd) of 360mW
● Operating temperature range -55°C to 150°C
● Low on state resistance of 8ohm at Vgs -4.5V
Infineon
8 Pages / 0.26 MByte
Infineon
6 Pages / 0.25 MByte
Infineon
Trans MOSFET P-CH 60V 0.17A 3Pin SOT-23 T/R
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