| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -45.0 V |
| Current Rating | -100 mA |
| Case/Package | SOT-23 |
| Polarity | PNP, P-Channel |
| Power Dissipation | 225 mW |
| Breakdown Voltage (Collector to Emitter) | -45.0 V |
| Continuous Collector Current | 0.1A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR), Cut Tape (CT) |
The BC857BLT1G is a -45V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.
● Halogen-free/BFR-free
● -50V Collector to base voltage (VCBO)
● -5V Emitter to base voltage (VEBO)
● -200mADC Peak collector current
● 556°C/W Thermal resistance, junction to ambient
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Leshan Radio
PNP Silicon General Purpose Transistors
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