ZTX853 Datasheet PDF - Diodes

If you require a general purpose BJT that can handle high voltages, then the NPN ZTX853 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V.