ZTX651 Datasheet PDF - Diodes

If you require a general purpose BJT that can handle high voltages, then the NPN ZTX651 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C.