| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 70.0 V |
| Current Rating | 20.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 50.0 mΩ |
| Power Dissipation | 83.0 W |
| Breakdown Voltage (Drain to Source) | 70.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
DESCRIPTION
●The VNP20N07 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.
●■ LINEAR CURRENT LIMITATION
●■ THERMAL SHUT DOWN
●■ SHORT CIRCUIT PROTECTION
●■ INTEGRATED CLAMP
●■ LOW CURRENT DRAWN FROM INPUT PIN
●■ DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
●■ ESD PROTECTION
●■ DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
●■ COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-220 PACKAGE
ST Microelectronics
11 Pages / 0.36 MByte
ST Microelectronics
STMICROELECTRONICS VNP20N07-E MOSFET Transistor, N Channel, 10A, 80V, 50mohm, 10V, 3V
ST Microelectronics
MOSFET POWER 70V 20A ISOWATT220
ST Microelectronics
MOSFET N-CH 70V 20A TO-220
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