| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Drain to Source Resistance (on) (Rds) | 120 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 35.0 W |
| Breakdown Voltage (Drain to Source) | 40.0 V |
| Continuous Drain Current (Ids) | 3.50 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.
●Features
●■ Linear current limitation
●■ Thermal shutdown
●■ Short circuit protection
●■ Integrated clamp
●■ Low current drawn from input pin
●■ Diagnostic feedback through input pin
●■ ESD protection
●■ Direct access to the gate of the Power MOSFET (analog driving)
●■ Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive
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