TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Voltage Rating (DC) | 60.0 V |
Current Rating | 10.0 A |
Case/Package | TO-252 |
Drain to Source Resistance (on) (Rds) | 300 mΩ |
Power Dissipation | 35.0 W |
Breakdown Voltage (Drain to Source) | 60.0 V |
Continuous Drain Current (Ids) | 10.0 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Description
●The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
●■ Linear current limitation
●■ Thermal shutdown
●■ Short circuit protection
●■ Integrated clamp
●■ Low current drawn from input pin
●■ Logic level input threshold
●■ ESD protection
●■ Schmitt trigger on input
●■ High noise immunity
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