TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | 50.0 V |
Current Rating | 150 mA |
Case/Package | SOT-363 |
Polarity | NPN |
Power Dissipation | 150 mW |
Breakdown Voltage (Collector to Base) | 60.0 V |
Breakdown Voltage (Collector to Emitter) | 50V |
Continuous Collector Current | 0.15A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
The UMX1NTN is a dual NPN general purpose amplification Bipolar Transistor with epitaxial planar type NPN silicon structure. The device integrating two transistors is available in ultra-compact package, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators and driver ICs.
● Ultra-compact complex digital transistor
● Potential divider type
● Small surface-mount package
● Transistor elements are independent, eliminating interference
ROHM Semiconductor
3 Pages / 0.07 MByte
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9 Pages / 1.93 MByte
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1 Pages / 0.12 MByte
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