ULN2003AP Datasheet PDF - Toshiba

Manufacturer:	Toshiba
Category:	BJTs
Case Package:	DIP
Description:	PDIP NPN 50V 0.5A
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

ADatasheet has not yet included the datasheet for ULN2003AP

If necessary, please send a supplementary document request to the administrator

ULN2003AP Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	16 Pin
Voltage Rating (DC)	50.0 V
Current Rating	500 mA
Case/Package	DIP
Polarity	NPN
Breakdown Voltage (Collector to Emitter)	50V
Continuous Collector Current	0.5A

TYPE	DESCRIPTION
Packaging	Tube

UTC

7CH DARLINGTON SINK DRIVER

ETC1

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS

ETC2

PACKAGE INFORMATION

PDIP NPN 50V 0.5A

SOIC NPN 50V 0.5A

ST Microelectronics

Bipolar Transistor Array, Darlington, NPN, 50V, 2.25W, 500mA, 1000 hFE, DIP

ST Microelectronics

STMICROELECTRONICS ULN2003D1013TR Bipolar (BJT) Array Transistor, Darlington, NPN, 50V, 500mA, 1000, SOIC

SOIC NPN 50V 0.5A

SOIC NPN 50V 0.5A

SOIC NPN 50V 0.5A

72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.

New Parts

Relate Documentations: ULN2003 Datasheet

Popular Parts