| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-3P(L) |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 230V |
| Continuous Collector Current | 15A |
The TTA1943 from Toshiba is a through hole PNP silicon epitaxial transistor in TO-3 package. This device is commonly used for power amplification.
● Collector to emitter voltage (Vce) is -230V
● Collector current (Ic) is -15A
● Power dissipation (Pd) is 150W
● Collector to emitter saturation voltage of -3V at -8A collector current
● DC current gain (hFE) of 80 at -1A collector current
● Operating junction temperature range from 150°C
Toshiba
5 Pages / 0.18 MByte
Toshiba
1 Pages / 0.08 MByte
Toshiba
5 Pages / 0.18 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
