| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252 |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Drain to Source Voltage (Vds) | 600V |
| Continuous Drain Current (Ids) | 1.00 A |
General Description
●The TSM1N60L is used an advanced termination schemeto provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, highspeed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
●Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a discrete fast recovery diode.
● IDSS and VDS(on) specified at elevated temperature
Taiwan Semiconductor
8 Pages / 0.17 MByte
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