Transistor Inverters
●Inverter for Air Conditioners
●IGBT Gate Drivers
●Power MOSFET Gate Drivers
●The TOSHIBA TLP250F(INV) consists of a GaAℓAs light emitting diode optically coupled to an integrated photodetector and is housed in an 8-pin DIP package.
●The TLP250F(INV) is suitable for gate driving circuitry of IGBTs or power MOSFETs.
●Absolute maximum ratings and electrical characteristics are the same as those of the TLP250(INV) and listed in its datasheet.
●• Input threshold current: IF = 5 mA (max)
●• Supply current : 11 mA (max)
●• Supply voltage : 10 V to 35 V
●• Output current : ±1.5 A (max)
●• Switching time : tpHL, tpLH = 0.5 μs (max)
●• Isolation voltage : 2500 Vrms (min)
●• UL recognized : UL1577, file no. E67349
●• Option (D4) type
● VDE approved: DIN EN 60747-5-2, certificate No. 40011913
● Maximum operating insulation voltage: 1140 VPK
● Maximum permissible overvoltage: 6000 VPK
● (Note 1) When an EN 60747-5-2 approved type is needed, please designate the “ Option (D4) ”.
●• Structural parameter
● Creepage distance: 8.0 mm (min)
● Clearance: 8.0 mm (min)
