| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-3P |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 100V |
| Continuous Collector Current | 25A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
●Features
●■ Low collector-emitter saturation voltage
●■ Complementary NPN-PNP transistors
●Applications
●■ General purpose
●■ Audio amplifier
ST Microelectronics
9 Pages / 0.18 MByte
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