TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -60.0 V |
Current Rating | 3.00 A |
Case/Package | TO-220 |
Polarity | PNP, P-Channel |
Power Dissipation | 40.0 W |
Breakdown Voltage (Collector to Emitter) | 60V |
Continuous Collector Current | 3A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Look no further than ON Semiconductor"s PNP TIP32AG general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
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