| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -10.0 A |
| Case/Package | TO-218 |
| Polarity | PNP, P-Channel |
| Power Dissipation | 125 W |
| Breakdown Voltage (Collector to Emitter) | -100 V |
| Continuous Collector Current | 10A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
●PNP Darlington Transistors, ON Semiconductor
●These Darlington transistors by ON Semiconductor are a compound structure consisting of two bipolar transistors, either integrated or separated devices. These devices are connected so the current amplified by the first transistor is further amplified by the second device.
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