| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 10.0 A |
| Case/Package | TO-218 |
| Polarity | NPN |
| Power Dissipation | 90.0 W |
| Breakdown Voltage (Collector to Base) | 100 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
●Features
●■ Monolithic Darlington configuration
●■ Integrated antiparallel collector-emitter diode
●Application
●■ Linear and switching industrial equipment
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