| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | 7.40 A |
| Case/Package | TO-220-3 |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 60V |
| Continuous Collector Current | 2A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Look no further than ON Semiconductor"s PNP TIP115G Darlington transistor, which can amplify the signal to provide higher current gains. This Darlington transistor array"s maximum emitter base voltage is 5 V. This product"s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
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