DESCRIPTION
●The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes/264 words u32 pages u1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCCand 1.65 V to 1.95 V for VCCQ). The device has a 528-byte/264-words static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte/256-words increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes:
●528 bytes u32 pages/8k words + 256 words:264 words x 32 pages).
●FEATURES
●Organization TC58DxM72A1xxxx TC58DxM72F1xxxx
● Memory cell allay 528 x 32K x8 264 x 32k x 16
● Register 528 x 8 264 x 16
● Page size 528 bytes 264 words
● Block size (16K 512) bytes (8k + 256) words
●Modes
● Read, Reset, Auto Page Program
● Auto Block Erase, Status Read
●Mode control
● Serial input/output
● Command control
●Power supply TC58DVM72x1xxxx TC58DAM72x1xxxx
● Vcc: 2.7V to 3.6V 2.7V to 3.6V
● Vccq: 2.7V to 3.6V 1.65V to 1.95V
●Program/Erase Cycles 1E5 cycle (with ECC)
●Access time
● Cell array to register 25 Ps max
● Serial Read Cycle 50 ns min
●Operating current
● Read (50 ns cycle) 10 mA typ.
● Program (avg.) 10 mA typ.
● Erase (avg.) 10 mA typ.
● Standby 50 PA max.
●Package
● TSOP I 48-P-1220-0.50 (Weight:0.53g typ)
