| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | MAX-247 |
| Polarity | N-Channel |
| Power Dissipation | 447 W |
| Drain to Source Voltage (Vds) | 600V |
| Continuous Drain Current (Ids) | 37.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The STY80NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company"s strip layout to yield one of the world"s lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters.
● The worldwide best RDS (ON) in Max247
● 100% Avalanche tested
● Low gate input resistance
ST Microelectronics
12 Pages / 0.34 MByte
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