| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 300 V |
| Current Rating | 60.0 A |
| Case/Package | MAX-247 |
| Drain to Source Resistance (on) (Rds) | 45.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 450 W |
| Drain to Source Voltage (Vds) | 300V |
| Breakdown Voltage (Drain to Source) | 300 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 60.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Compared to traditional transistors, STY60NK30Z power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 450000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ST Microelectronics
8 Pages / 0.18 MByte
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