| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | MAX-247 |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 650V |
| Continuous Drain Current (Ids) | 96A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STY112N65M5 is a MDmesh™ V N-channel Power MOSFET offers excellent switching performance. This MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiency.
● Higher VDSS rating
● Higher dV/dt capability
● Easy to drive
● 100% Avalanche tested
ST Microelectronics
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