| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 900 V |
| Current Rating | 8.00 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 1.30 Ω |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Drain to Source Voltage (Vds) | 900 V |
| Breakdown Voltage (Drain to Source) | 900 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 8.00 A |
| Rise Time | 13.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STW9NK90Z is a 900V N-channel Zener-protected SuperMESH™ Power MOSFET obtained through an optimization of STMicroelectronics’ well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applications. This series complement STs’ full range of high voltage power MOSFETs.
ST Microelectronics
17 Pages / 0.96 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
N-CHANNEL 900V 1.1Ω 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
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