TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Polarity | N-Channel |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The STW55NM60ND is a FDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
● The worldwide best RDS (ON) amongst the fast recovery diode device
● 100% Avalanche tested
● Low gate input resistance
● High dV/dt and avalanche capabilities
ST Microelectronics
12 Pages / 0.28 MByte
ST Microelectronics
12 Pages / 0.22 MByte
ST Microelectronics
32 Pages / 0.51 MByte
ST Microelectronics
N-channel 600V, 0.047Ω, 51A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
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