| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.50 kV |
| Current Rating | 4.00 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 7.00 Ω |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Input Capacitance | 1.30 nF |
| Gate Charge | 50.0 nC |
| Drain to Source Voltage (Vds) | 1.50 kV |
| Breakdown Voltage (Drain to Source) | 1.50 kV |
| Continuous Drain Current (Ids) | 4.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● 100% Avalanche tested
● Intrinsic capacitances and Qg minimized
● High speed switching
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