| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 600V |
| Continuous Drain Current (Ids) | 35A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●This device is an N-channel Power MOSFET realized using the second generation of MDmesh™ technology known as FDmesh™ II. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
●■ The worldwide best RDS(on)
●area amongst the fast recovery diode devices
●■ 100% avalanche tested
●■ Low input capacitance and gate charge
●■ Low gate input resistance
●■ Extremely high dv/dt and avalanche capabilities.
●Application
●■ Switching applications
●– Automotive
ST Microelectronics
0.98 MByte
ST Microelectronics
13 Pages / 1.22 MByte
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