| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 45.0 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 110 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 417 W |
| Drain to Source Voltage (Vds) | 650 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 45.0 A |
| Rise Time | 20.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high
●dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products.
●General features
●■ High dv/dt and avalanche capabilities
●■ 100% avalanche tested
●■ Low input capacitance and gate charge
●■ Low gate input resistance
●■ Tight process control and high manufacturing yields
●Applications
●■ Switching application
ST Microelectronics
12 Pages / 0.31 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
Trans MOSFET N-CH 600V 45A 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Automotive-grade N-channel 600V, 0.085Ω typ., 34A MDmesh DM2 Power MOSFET in a TO-247 package
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