| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 650V |
| Continuous Drain Current (Ids) | 26A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the STW33N60M2 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 190000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh ii technology.
ST Microelectronics
19 Pages / 1.09 MByte
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