| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 650 V |
| Current Rating | 20.0 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 290 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 192 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 20.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STW20NM60 is a 600V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing proprietary strip technique, MOSFET boasts an overall dynamic performance which is superior. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● High dv/dt and avalanche capabilities
● 100% Avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
ST Microelectronics
18 Pages / 0.42 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
N-CHANNEL 600V 0.26Ω 20A TO-220 TO-220FP TO-247 FDMESH POWER MOSFET
ST Microelectronics
Trans MOSFET N-CH 900V 20A 3Pin(3+Tab) TO-247 Tube
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