| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 950 V |
| Current Rating | 10.0 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 690 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 230 W |
| Input Capacitance | 3.50 nF |
| Gate Charge | 113 nC |
| Drain to Source Voltage (Vds) | 950 V |
| Breakdown Voltage (Drain to Source) | 950 V |
| Breakdown Voltage (Gate to Source) | 30.0 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 20.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STW12NK95Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
● Extremely high dV/dt capability
● 100% Avalanche tested
ST Microelectronics
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