TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 120 A |
Case/Package | TO-247 |
Drain to Source Resistance (on) (Rds) | 9.00 mΩ |
Polarity | N-Channel |
Power Dissipation | 312 W |
Input Capacitance | 5.20 nF |
Gate Charge | 233 nC |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
Continuous Drain Current (Ids) | 110 A |
Rise Time | 90.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The STW120NF10 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize the ON-resistance. It is suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-to-DC converters for telecom and computer application. It is also intended for any applications with low gate drive requirements.
● Exceptional dV/dt capability
● 100% Avalanche tested
● Application oriented characterization
● -55 to 175°C Operating junction temperature
ST Microelectronics
21 Pages / 0.91 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
Trans MOSFET N-CH 100V 110A 3Pin(3+Tab) TO-247 Tube
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