| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 8.30 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 1.38 Ω |
| Polarity | N-Channel |
| Power Dissipation | 230 W |
| Drain to Source Voltage (Vds) | 1.00 kV |
| Breakdown Voltage (Drain to Source) | 1.00 kV |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 8.30 A |
| Rise Time | 18.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STW11NK100Z is a 1000V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● Extremely high dv/dt capability
● 100% Avalanche tested
● Gate charge minimized
● Very low intrinsic capacitance
● Very good manufacturing repeatability
●ESD sensitive device, take proper precaution while handling the device.
ST Microelectronics
14 Pages / 0.3 MByte
ST Microelectronics
1 Pages / 0.37 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
Power MOSFET, N Channel, 8.3A, 1kV, 1.38Ω, 10V, 3.75V
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