| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251 |
| Polarity | N-Channel |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STU7NM60N is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product offers improved ON-resistance, low gate charge, high dV/dt capability and excellent avalanche characteristics.
● 100% Avalanche tested
● Low gate input resistance
ST Microelectronics
17 Pages / 0.85 MByte
ST Microelectronics
18 Pages / 0.17 MByte
ST Microelectronics
N-Channel 600V 900mΩ 14NC Through Hole MDmesh™ Power Mosfet - TO-251
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