| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | IPAK |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 600V |
| Continuous Drain Current (Ids) | 10A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.
●■ 100% avalanche tested
●■ Low input capacitance and gate charge
●■ Low gate input resistance
●Application
●Switching applications
ST Microelectronics
17 Pages / 0.88 MByte
ST Microelectronics
27 Pages / 1.22 MByte
ST Microelectronics
18 Pages / 0.17 MByte
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