| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SO |
| Drain to Source Resistance (on) (Rds) | 30.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Drain to Source Voltage (Vds) | 20V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | 6.00 A |
| Rise Time | 33.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STS6NF20V is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. The device is suitable for use as primary switch in advanced high-efficiency isolated DC-to-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
● Ultra low threshold gate drive
● Standard outline for easy automated surface-mount assembly
ST Microelectronics
1 Pages / 0.71 MByte
ST Microelectronics
12 Pages / 0.48 MByte
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