| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 3.00 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 90.0 mΩ |
| Polarity | Dual N-Channel |
| Power Dissipation | 2.00 W |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -18.0 V to 18.0 V |
| Continuous Drain Current (Ids) | 3.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Cut Tape (CT) |
The STS2DNF30L is a dual N-channel STripFET™ Power MOSFET for switching applications. This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Standard outline for easy automated surface-mount assembly
● Low threshold gate drive
ST Microelectronics
12 Pages / 0.28 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
N-Channel 30V - 0.09Ω - 3A - SO-8 STripFET(TM) II POWER MOSFET
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