| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
●Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.
●Key Features
● No reverse recovery charge in application current range
● Switching behavior independent of temperature
● Dedicated to PFC applications
● ECOPACK® 2 compliant component
ST Microelectronics
9 Pages / 0.33 MByte
ST Microelectronics
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650V power Schottky silicon-carbide diode
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