| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STPSC2006CW is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. ST SiC diode will boost the performance of PFC operations in hard switching conditions.
● No or negligible reverse recovery
● Switching behaviour independent of temperature
● Particularly suitable in PFC boost diode function
ST Microelectronics
7 Pages / 0.07 MByte
ST Microelectronics
2 Pages / 0.45 MByte
ST Microelectronics
12 Pages / 0.3 MByte
ST Microelectronics
STMICROELECTRONICS STPSC2006CW Silicon Carbide Schottky Diode, SIC, 600V Series, Dual Common Cathode, 600V, 20A, 12NC, TO-247
ST Microelectronics
Diode Schottky SiC 650V 20A Automotive 2Pin(2+Tab) TO-220AC Tube
ST Microelectronics
Diode Schottky SiC 650V 20A 2Pin(2+Tab) TO-220AC Tube
ST Microelectronics
Diode Schottky SiC 650V 20A 2Pin(2+Tab) TO-220AC Ins Tube
ST Microelectronics
Diode Schottky SiC 650V 20A Automotive 2Pin(2+Tab) DO-247 Tube
ST Microelectronics
Diode Schottky SiC 650V 20A 2Pin(2+Tab) DO-247 Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
