| TYPE | DESCRIPTION |
|---|
| Number of Pins | 2 Pin |
| Case/Package | TO-220AC |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
●Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.
●Key Features
● No or negligible reverse recovery
● Switching behavior independent of temperature
● Dedicated to PFC applications
● High forward surge capability
● AEC-Q101 qualified
● PPAP capable
● Operating Tj from -40 °C to 175 °C
● ECOPACK® 2 compliant component
ST Microelectronics
9 Pages / 0.43 MByte
ST Microelectronics
Diode Schottky 650V 12A Automotive 2Pin(2+Tab) TO-220AC Tube
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