| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | TO-220AC |
| Forward Voltage | 2.10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
●ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
●Key Features
● No or negligible reverse recovery
● Switching behavior independent of temperature
● Particularly suitable in PFC boost diode function
ST Microelectronics
7 Pages / 0.09 MByte
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STMICROELECTRONICS STPSC1006D Silicon Carbide Schottky Diode, SIC, 600V Series, Single, 600V, 10A, 12NC, TO-220AC
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STMICROELECTRONICS STPSC1006G-TR Silicon Carbide Schottky Diode, SIC, Single, 600V, 10A, 12NC, TO-263
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