TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 7.20 A |
Case/Package | TO-220 |
Drain to Source Resistance (on) (Rds) | 850 mΩ |
Polarity | N-Channel |
Power Dissipation | 110 W |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
Continuous Drain Current (Ids) | 7.20 A |
Rise Time | 20.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The STP9NK50Z is a SuperMESH™ N-channel Zener-protected MOSFET obtained through an extreme optimization of well-established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
● 0.72R RDS (ON)
● Extremely high dV/dt capability
● 100% Avalanche tested
● Gate charge minimized
● Very low intrinsic capacitances
● Very good manufacturing repeatability
● -55 to 150°C Operating junction temperature range
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