TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220 |
Polarity | N-Channel |
Power Dissipation | 70.0 W |
Drain to Source Voltage (Vds) | 30V |
Continuous Drain Current (Ids) | 40.0 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The STP85N3LH5 is a N-channel Power MOSFET utilizes the 5th generation of design rules of proprietary STripFET™ technology. The lowest available RDS (ON)
●Qg, in the standard packages, makes this device suitable for the most demanding DC-to-DC converter applications, where high power density is to be achieved.
● RDS (ON) x Qg industry benchmark
● Extremely low ON-resistance RDS (ON)
● High avalanche ruggedness
● Low gate drive power losses
ST Microelectronics
16 Pages / 0.79 MByte
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