| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 80.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 10.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 80.0 A |
| Rise Time | 85.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STP80NF06 is a 60V N-channel STripFET™ II Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● 100% Avalanche tested
● Low threshold drive
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