| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Current Rating | 62.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 15.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Breakdown Voltage (Drain to Source) | 40.0 V |
| Breakdown Voltage (Gate to Source) | 18.0 V |
| Continuous Drain Current (Ids) | 62.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STP62NS04Z is a N-channel clamped fully protected Power MOSFET produced by using most advanced MESH OVERLAY™ process based on strip layout. The inherent benefits of this new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operating conditions such as those encountered in the automotive environment. It is also recommended for any other application requiring extra ruggedness.
● 100% Avalanche tested
● Low capacitance and gate charge
● 175°C Maximum junction temperature
ST Microelectronics
12 Pages / 0.5 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
4 Pages / 0.01 MByte
ST Microelectronics
Trans MOSFET N-CH 33V 62A 3Pin(3+Tab) TO-220 Tube
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