| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 55.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 14.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 95.0 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -16.0 V to 16.0 V |
| Continuous Drain Current (Ids) | 55.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STP55NF06L is a N-channel Power MOSFET, latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Exceptional dv/dt Capability
● 100% Avalanche Tested
● Application Oriented Characterization
ST Microelectronics
15 Pages / 0.32 MByte
ST Microelectronics
4 Pages / 0.01 MByte
ST Microelectronics
N-CHANNEL 60V - 0.017Ω - 50A TO-220/TO-220FP/I2PAK STRIPFET II POWER MOSFET
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