| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 500 V |
| Current Rating | 3.00 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 2.70 Ω |
| Polarity | N-Channel |
| Power Dissipation | 45.0 W |
| Input Capacitance | 310 pF |
| Gate Charge | 12.0 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 3.00 A |
| Rise Time | 15.5 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●The fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh™ advanced tecnology.
●■ 100% avalanche tested
●■ Extremely high dv/dt capability
●■ Gate charge minimized
●■ Very low intrinsic capacitances
●■ Very good manufacturing repeability
●Applications
●■ Switching application
ST Microelectronics
17 Pages / 0.87 MByte
ST Microelectronics
MOSFET N-CH 500V 3A TO-220FP
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