| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 3.00 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 2.70 Ω |
| Polarity | N-Channel |
| Power Dissipation | 45.0 W |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 3.00 A |
| Rise Time | 7.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
DESCRIPTION
●The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series comple ments ST full range of high voltage MOSFETs in cluding revolutionary MDmesh™ products.
●■ TYPICAL RDS(on) = 2.3 Ω
●■ EXTREMELY HIGH dv/dt CAPABILITY
●■ 100% AVALANCHE TESTED
●■ GATE CHARGE MINIMIZED
●■ VERY LOW INTRINSIC CAPACITANCES
●■ VERY GOOD MANUFACTURING REPEATIBILITY
ST Microelectronics
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MOSFET N-CH 500V 3A TO-220FP
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