| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.50 kV |
| Current Rating | 4.00 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 5.00 Ω |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Input Capacitance | 1.30 nF |
| Gate Charge | 50.0 nC |
| Drain to Source Voltage (Vds) | 1.50 kV |
| Breakdown Voltage (Drain to Source) | 1.50 kV |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 4.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STP4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● 100% Avalanche tested
● Intrinsic capacitances and Qg minimized
● High speed switching
ST Microelectronics
0.71 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
Trans MOSFET N-CH 200V 40A 3Pin(3+Tab) TO-220 Tube
Shinano Kenshi
12V 1.8 Step Angle Bipolar Stepper Motor
ST Microelectronics
MOSFET N-Ch 300V 0.063Ω 42A pwr MOSFET
ST Microelectronics
STMICROELECTRONICS STP45N65M5 Power MOSFET, N Channel, 35A, 650V, 0.067Ω, 10V, 4V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
